| PART |
Description |
Maker |
| 2SK3408 |
4-V power source Low on-state resistance
|
TY Semiconductor Co., Ltd
|
| 2SK3105 |
4 V power source Low on-state resistance
|
TY Semiconductor Co., Ltd
|
| STL7NM60N |
Low input capacitance and gate charge, Low gate input resistance
|
STMicroelectronics
|
| STB13NM60N STD13NM60N |
Low gate input resistance
|
STMicroelectronics
|
| AP4224LGM-HF AP4224LGM-HF-14 |
Low On-Resistance, Capable of 2.5V Gate Drive
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| 2SK1960 |
Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX
|
TY Semiconductor Co., L...
|
| AP9926GEO-HF AP9926GEO-HF-14 |
Capable of 2.5V Gate Drive, Surface Mount Package
Low On-resistance
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| 2SK3109 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
|
TY Semiconductor Co., Ltd
|
| KI4562DY |
PIN Configuration Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
| ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包)
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V
From old datasheet system
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2SK3510 |
Super low on-state resistance: RDS(on) = 8.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| KI1903DL |
Drain-source voltage Vds -20V Gate-source voltage Vgs -12V
|
TY Semiconductor Co., L...
|
